Hunan Ketao China Industry Co., Ltd.  

Product Name: Good Thermal Conductivity Aln Aluminum Nitride Ceramic Substrate Model NO.: Good thermal conductivity AlN Aluminum nitride cer Certification: CCC, E-mark, DOT, GOST, SONCAP, PVOC, NRCS, GCC, ARAI Resistance: Shock-Resistant Brand: Aluminum Nitride Ceramic Substrates Function: Dipped Headlight, High Beam, Front Position Lamp Voltage: 12V base: Customized Car Make: Customized Material: LED LED: Aluminum Nitride Ceramic Substrates Trademark: KT Transport Package: Export Safe Packing Specification: led Origin: China HS Code: 854710000 Product Description Aluminum Nitride Substrates Aluminum Nitride Ceramic SubstratesAluminumNitride(AlN) ceramic (plate substrate tubes rod disc crucibles parts etc.)AluminumNitride(AlN)ceramicisacovalentbondcompound,atomiccrystal,adiamond-likenitrate,hexagonalcrystalsystem,non-toxin,whiteorgraywhite,theoreticbulkdensity3.26g/cm3.AlNceramichasfollowingproperties:(1)Highthermalconductivity(theoreticvalue320W/m.K)(2)Highelectricityresistance(3)Lowcoefficientofheatexpansion(4.5X10-6ºC)GoodmarchwithSi(3.5~4×10-6ºC)andGaAs(6×10-6ºC)(4)Excellentelectricityproperties(Dielectricconstant,dielectricloss,bulkresistivity,dielectricstrength).(5)Goodmechanicproperties(6)Excellentcorrosionresistance(7)GoodopticaltransmissionpropertyAlNceramichasbecomeanidealmaterialforheatradiationandpackageinindustriesoflargescaleIC,semiconductormodule,highpowerICandhighpowercomponents,beenwidelyutilizedinHBLED,UVLED,highpowerIC,powermodule,RF/microwavecommunication,automotive,microelectronicsemiconductor,imagetransmission.Property Index of ALN Aluminum NitrideProperty SortProperty ContentUnitProperty IndexBasic PropertiesAppearance/colorGrayWater absorption%0Volume densityg/cm3≥3.30Surface roughness Raμm0.3~0.6Camber(length ‰)≤2‰(30ºC)W/m.k≥180Thermal PropertiesThermal conductivity(20ºCto300ºC)×10-6/ºC4.4Thermal expansivity ×10-6/ºC4.8(300ºCto800ºC)Mechanical PropertiesFlexural strengthMPa≥420Modulus of elasticityGPa320Moh''s hardness-8Electrical propertiesDielectric constant (1MHz 25ºC)-8.9(1MHz 25ºC) Dielectric loss×10-42.8Dielectric strengthKV/mm≥17Volume resistivityΩ.cm≥1014Regular specification of AlN substrate and waferThickness(mm)L*W( mm)0.3852″* 2″ 50.8mm*50.8mm3″* 3″ 76.2mm*76.2mm4″* 4″ 101.6mm*101.6mm4.5″* 4.5″ 114.3mm*114.3mm0.50.6351Diameter(mm)1Φ16 Φ19 Φ20 Φ26Φ30 Φ35 Φ40 Φ45Φ50 Φ52Φ60Φ75Φ801.21.522.5PS: Other dimension and thickness which not listed are available upon requests.Packaging &DeliveryPackaging Details: (1) Export safe wooden box (2)Inner boxes with filler . (3)Outpackage is high quality cartons . (4)Custom packageWhat can we do for you?1. Sample is available.2. Independent R&D, ISO manufacture, precise quality standards, modern logistics management, and sound marketing strategy.3. Inquiry replied within 24 hours.4. Patented products.5. OEM or ODM is available.6. Some extra accessories can be supplied.7.The larger quantity you order,the more competitive prices you'll get.8. Necessary Certificates can be supplied.Why To Choose Us1. What's your MOQ ;We have no MOQ for your try orders.It won't occupy too much of your money to help you to test the market you're going to enter.2. R& DCenter and Factory: We have our own R& Dcenter and factory, so we can supply you products at competitive price.3. Good Service : We treat clients as friends.4. Good Quality : We import top quality accessories to manufacture our products, we have confident we can offer you the best quality.5. After-sales service:One year's guarantee. Wearing accessories comes with the products to help you to reduce the repair bill.